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| 2SA2018F Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor FEATURES High Collector Current Low VCE(sat) - VCE(sat) -250mV SOT-523 Dim at IC = -200mA/IB=-10mA A Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70 A B C D G H D MARKING CODE BW S L 3 Top View 2 1 B J K C J K 3. Collector 2. Base G L S 1. Emitter H All Dimension in mm Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -15 -12 -6 -0.5 0.15 -55~+150 -55~+150 Unit V V V A W o o C C Electrical Characteristics (Tamb=25 o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. -15 -12 -6 Typ. Max. Unit V V V A A Conditions IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCB=-15V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-10mA -0.1 -0.1 270 680 -0.25 260 6.5 V MHz pF IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Collector Output capacitance Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA2018F Elektronische Bauelemente PNP Silicon General Purpose Transistor z(OHFWULFDO CKDUDFWHULVWLF CXUYHV http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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